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Symposium CI
Progress in Electroceramics Research

Conveners:
Jun AKEDO, AIST, Japan (Programme Chair)
Satoshi WADA, University of Yamanashi, Japan

Members:
Sheikh AKBAR, Ohio State University, USA
Uthamalingam BALACHANDRAN, Argonne National Laboratory, USA
Andrew BELL, University of Leeds, UK
Fanglin (Frank) CHEN, University of South Carolina, USA
Dragan DAMJANOVIC, EPFL, Switzerland
Brahim DKHIL, CentraleSupelec, France
Catherine ELISSALDE, ICMCB-CNRS, France
Mohammed ES-SOUNI, HAW Kiel-University of Applied Sciences, Germany
Tor GRANDE, Norvegian University of Science and Technology, Norway
Heli Maarit JANTUNEN, University of Oulu, Finland
Kazumi KATO, AIST, Japan
Jong-Heun LEE, Korea University, Korea
Jing-Feng LI, Tsinghua University, China
Barbara MALIC, Jozef Stefan Institute, Slovenia
Ichiro MATSUBARA, AIST, Japan
Liliana MITOSERIU, University "Alexandru Ioan Cuza", Romania
Reginaldo MUCCILLO, CCTM - IPEN, Brazil
Naoki OHASHI, NIMS, Japan
Lorena PARDO, ICMM, CSIC, Spain
Ian M. REANEY, The University of Sheffield, UK
Jürgen ROEDEL, Technical University of Darmstadt, Germany
Nava SETTER, EPFL & Tel Aviv University, Switzerland & Israel
Derek C. SINCLAIR, University of Sheffield, UK
Danilo SUVOROV, Institut “Jozef Stefan”, Slovenia
Rick UBIC, Boise State University, USA
Xiaohui WANG, Tsinghua University, China
Tetsuya YAMAMOTO, Kochi University of Technology, Japan
Shujun ZHANG, University of Wollongong, Australia
Harvey AMORIN, ICMM - CSIC, Spain
Masaki AZUMA, Tokyo Tech, Japan
Andreja BENČAN, Jožef Stefan Institute, Slovenia
Xiang Ming CHEN, Zhejiang University, China
Charlotte COCHARD, Queen’s University, UK
Anderson JANOTTI, The University of Delaware, USA
Heli Maarit JANTUNEN, University of Oulu, Finland
Yunseok KIM, Sungkyunkwan University, South Korea
Yoshihiro KUROIWA, Hiroshima University, Japan
Martin LETZ, SCHOTT AG, Germany
Jing-Feng LI, Tsinghua University, China
Yunya LIU, Xiangtan University, China
Xavier MOYA, University of Cambridge, UK
Ryan O’HAYRE, Colorado Schools of Mines, USA
Takahisa OMATA, Tohoku University, Japan
Biaolin PENG, Guangxi University China
Ian M. REANEY, The University of Sheffield, UK
Matthew SUCHOMEL, ICMCB – CNRS, France
Terumasa TADANO, National Institute for Materials Science, Japan
Masato UEHARA, AIST, Japan
Satoshi WADA, University of Yamanashi, Japan
Hong WANG, Southern University of Science and Technology, China
Yaojin WANG, Nanjing University of Science and Technology, China
Kyle WEBBER, Friedrich-Alexander-University of Erlangen-Nürnberg, Germany
Tetsuya YAMAMOTO, Kochi University of Technology, Japan
Kyung Joong YOON, Korea Institute of Science and Engineering, South Korea
 
Improvements in basic knowledge and practical exploitation of their unique properties, has established electrical ceramics as a central and fast developing sector in materials research, resulting in a significant impact on several areas of modern technologies. The increasing demand for even more refined or novel properties hardly to be competitively met by other materials is fuelling the interest for improved or new processing routes and deeper understanding of the fundamental materials science to meet requirements coming from a variety of advanced civilian and defence applications.
Materials with unusually high dielectric constant, with low loss and low temperature resonance coefficient at very high frequencies, lead-free piezoelectrics, multifunctional materials such as multiferroic heterostructures and ionic and mixed ionic electronic conducting ceramics are but some examples of the ongoing developments in the area which massively makes use of the opportunities offered by nanoscience and nanotechnology, and by computational modelling and new theory.
 
Major focus will be on:
 
  • Development of new and more efficient processes, better characterisation tools of bulk, crystalline, glassy and amorphous materials, thin films, multilayers, superlattices, nanomaterials, nanostructures and hybrid materials; advances in thin-film and related  micro/ nano-fabrication techniques and “bottom-up” approaches that offer the potential for high-density integration of nanoscale devices
  • Fundamental mechanisms, novel (multi)functional characteristics and behaviour of materials such as electronic structure, quantum effects, phase transitions, transport phenomena, defects, diffusion, domain structure and switching, grain boundary controlled mechanisms, nanosize effects, surfaces and interfaces, dielectric, piezoelectric, magnetic and optical properties, ageing and fatigue, reliability, fractals, modeling and simulation, etc.
  • New developments in devices including fuel cells, batteries, high energy density capacitors, gas separation membranes, tunable dielectrics for microwave applications, piezoelectric composites, sensors and actuators, MEMS/NEMS devices, and related integration technologies.
Session Topics

CI-1 Dielectrics and microwave materials

  • Fundamentals, synthesis, processing, characterisation
  • Capacitor dielectrics
  • Mott insulators
  • Microwave and millimeter wave dielectrics
  • Tunable dielectrics
  • LTCC
  • New thin film materials and integration technologies
  • Packaging and interconnect issues

CI-2 Ferroelectric, piezoelectric, pyroelectric, and ferroelastic ceramics

  • Synthesis and processing: polycrystalline ceramics and composites, thin/thick films, single crystals, novel materials
  • Lead-free ferroelectrics and piezoelectrics
  • Relaxor ferroelectrics
  • Theory and modelling
  • Characterisation
  • Electromechanical behaviour and piezoelectric applications
  • Thin film devices
  • Capacitor applications, MLCC
  • Sensor applications
  • Novel applications

CI-3 Multiferroics and magnetoelectric ceramics

  • Theory and modeling of single phase and composite multiferroics
  • Non-oxide, organic-inorganic and 5-d oxide multiferroics
  • Advances in materials synthesis and processing
  • Magnetoelectric characterization and electric field control of magnetization
  • Domain walls and dynamics of multiferroics
  • New effects
  • Devices and applications

CI-4 Semiconducting ceramics

  • Amorphous and crystalline semiconducting oxides
  • Non-oxide semiconductors
  • Synthesis, processing,characterisation
  • Defect chemistry, doping mechanisms, carriers origin and dynamics
  • Devices and applications

CI-5 Fast ion-conducting ceramics

  • Novel synthesis and materials
  • Ionic and mixed ion-electron conduction mechanisms
  • Electrochemical characterisation, thermochemical stability
  • Mechanical and thermal properties
  • Applications (e.g. energy conversion and storage, sensors, HT gas separation, catalysis, etc.)

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